Preparation and properties of indium tin oxide films deposited by reactive evaporation at different deposited rate

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 18, Issue 1, 2007, Pages

  Li, Lin Na ^a,b   Sun, Jian ^b   Xue, Jun Ming ^b   Li, Yang Xian ^a   Zhao, Ying ^b   Geng, Xin Hua ^b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

Carrier concentration; Electrical resistivity; Hall mobility; Indium tin oxide (ITO) films; Optical transmittance

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION RATES; ELECTRIC PROPERTIES; EVAPORATION; HALL MOBILITY; LIGHT TRANSMISSION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SOLAR CELLS; THIN FILMS;

ELECTRICAL RESISTIVITY; INDIUM TIN OXIDE (ITO) FILMS; OPTICAL TRANSMITTANCE; REACTIVE EVAPORATION;

OPTICAL MATERIALS;

EID: 34248335858     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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