Photoresist removal using atomic hydrogen generated by hot-wire catalyzer and effects on Si-wafer surface

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Yamamoto, Masashi ^a   Horibe, Hideo ^a,e   Umemoto, Hironobu ^b   Takao, Kazuhisa ^c   Kusano, Eiji ^a   Kase, Masataka ^d   Tagawa, Seiichi ^e  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c TOKYO OHKA KOGYO CO LTD   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

^e OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; HYDROGEN; IRRADIATION; PHOTORESISTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE TREATMENT; TUNGSTEN; WIRE;

ATOMIC HYDROGENS; CONTACT CATALYSIS; ENVIRONMENTALLY-FRIENDLY; NOVOLAK; PHOTORESIST FILMS; PHOTORESIST REMOVALS; POSITIVE TONES; SI WAFERS; SUBSTRATE HEATING; SUBSTRATE SURFACES; THERMAL SHRINKAGES;

PHOTORESISTS;

EID: 60849133033     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.026503     Document Type: Article

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