Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy

Journal of Crystal Growth

Volumn 311, Issue 4, 2009, Pages 1056-1059

  Fujii, Tetsuo ^a,b   Yoshii, Naoki ^c   Masuda, Rui ^a   Tanabe, Tetsuhiro ^b   Kamisawa, Akira ^b   Hosaka, Shigetoshi ^c   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b ROHM CO LTD   (Japan)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

A1. Crystal structure; A1. Nucleation; A3. Vapor phase epitaxy; B1. Oxide; B1. Zinc compounds

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EPITAXIAL LAYERS; NUCLEATION; SEMICONDUCTING ZINC COMPOUNDS; SULFUR COMPOUNDS; TRANSITION METAL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; ZINC; ZINC OXIDE;

A1. CRYSTAL STRUCTURE; A1. NUCLEATION; A3. VAPOR PHASE EPITAXY; B1. OXIDE; B1. ZINC COMPOUNDS;

VAPOR PHASE EPITAXY;

EID: 60649104590     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.026     Document Type: Article

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