Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Zhong, X Y ^a   Chen, Y C ^b   Tai, N H ^b   Lin, I N ^c   Hiller, J M ^a   Auciello, O ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c TAMKANG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; CHEMICAL BONDS; CHEMICAL REACTIONS; DIAMOND FILMS; DIAMONDS; GRAPHITE; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROCARBONS; HYDROGEN; ION BOMBARDMENT; IONS; NANOCRYSTALLINE MATERIALS; NONMETALS; NUCLEATION; PLASMAS; SILICON; SILICON CARBIDE; SURFACE CHEMISTRY; VOLTAGE DIVIDERS;

BIAS-ENHANCED GROWTHS; BIAS-ENHANCED NUCLEATIONS; CHEMICAL BONDINGS; ELECTRICAL FIELDS; GRAPHITE PHASIS; GROWTH MECHANISMS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; HYDROCARBON SPECIES; HYDROGEN PLASMAS; INTERFACIAL CHEMISTRIES; NUCLEATING SITES; NUCLEATION AND GROWTHS; NUCLEATION PROCESS; NUCLEATION SITES; PHYSICAL SPUTTERING; POLISHED SUBSTRATES; PRE TREATMENTS; SI ATOMS; SI SUBSTRATES; SI SURFACES; SUBSTRATE SURFACES; SURFACE PROFILES; TRIANGULAR PROFILES; ULTRA-NANO-CRYSTALLINE DIAMONDS; ULTRANANOCRYSTALLINE DIAMOND FILMS;

SUBSTRATES;

EID: 60449114447     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068366     Document Type: Article

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