Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

2004 4th IEEE Conference on Nanotechnology

Volumn , Issue , 2004, Pages 98-100

  Galloo, J S ^a   Roelens, Y ^a   Bollaert, S ^a   Pichonat, E ^a   Wallart, X ^a   Cappy, A ^a   Mateos, J ^b   Gonzales, T ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

Ballistic; Ballistic beam; Characterization; HSQ; Nanolithography; Schottky gates; TBJs; YBJs

Indexed keywords

BALLISTICS; CHARACTERIZATION; DIGITAL TO ANALOG CONVERSION; ETCHING; INTEGRATED CIRCUITS; LOGIC GATES; NANOTECHNOLOGY; NATURAL FREQUENCIES; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

BALLISTIC-BEAMS; HSQ; SCHOTTKY GATES; TBJS; YBJS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 20344380976     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Mateos J., Vasallo B.F., Pardo D.,Gonzalez T.,Galloo J.S., Roelens Y.,Bollaert S.,Cappy A., "Ballistic nanodevices for terahertz data processing: Monte Carlo simulations" Nanotechnology, 14(2003) 117-122
2. Xu H.Q., "Electrical properties of three-terminal ballistic junctions", Applied Physics Letters, V.78 N°14 (2 april 2001)
3. Xu H.Q., "A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics", Physica E, 13 (2002) 942-945
4. Mateos J., Vasallo B.F., Pardo D.,Gonzalez T., Galloo J.S., Bollaert S., Roelens Y., Cappy A., "Microscopic modelling of nonlinear transport in ballistic nanodevices", IEEE Transactions on Electron Devices 50, 1897-1905 (2003)