Photoluminescence investigation of ferromagnetic Ga 1-x Mn x N layers with GaN templates grown on sapphire (0 0 0 1) substrates

Applied Surface Science

Volumn 255, Issue 9, 2009, Pages 4840-4843

  Yoon, I T ^a   Ham, M H ^b   Myoung, J M ^b  

^a Dongguk University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Ferromagnetic semiconductor; Photoluminescence

Indexed keywords

FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MANGANESE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; TEMPERATURE DISTRIBUTION; WIDE BAND GAP SEMICONDUCTORS;

BAND GAP ENERGY; FERROMAGNETIC SEMICONDUCTOR; INCREASING TEMPERATURES; MN CONCENTRATIONS; PHOTOLUMINESCENCE INVESTIGATION; PHOTOLUMINESCENCE SPECTRUM; TEMPERATURE DEPENDENCE; VARSHNI EQUATIONS;

ENERGY GAP;

EID: 60249085605     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.011     Document Type: Article

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