Optical properties of green InGaN/GaN quantum-well light-emitting diodes with embedded AIGaN δ layer

Journal of the Korean Physical Society

Volumn 54, Issue 1, 2009, Pages 226-230

  Park, Seoung Hwan ^a   Lee, Yong Tak ^b   Park, Jongwoon ^c  

^a Catholic University of Daegu   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Korea Institute of Industrial Technology   (South Korea)

Author keywords

GaN; Green; InGAN; LED; Quantum well

Indexed keywords

EID: 60049097405     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.226     Document Type: Article

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