Andreev reflection versus Coulomb blockade in hybrid Semiconductor nanowire devices

Nano Letters

Volumn 8, Issue 12, 2008, Pages 4098-4102

  Doh, Yong Joo ^a,b   De Franceschi, Silvano ^c,d   Bakkers, Erik P A M ^e   Kouwenhoven, Leo P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c CEA GRENOBLE   (France)

^d LABORATORIO TASC   (Italy)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; COULOMB BLOCKADE; ELECTRIC WIRE; INDIUM ARSENIDE; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SUPERCONDUCTIVITY;

ANDREEV REFLECTIONS; CHARGING ENERGIES; COULOMB BLOCKADE EFFECTS; COULOMB INTERACTION ENERGIES; CURRENT-VOLTAGE CHARACTERISTICS; DENSITY OF STATE; INAS; INP; INTERMEDIATE COUPLINGS; LIMITING CASE; LOW-DIMENSIONAL SYSTEMS; NEGATIVE DIFFERENTIAL CONDUCTANCES; QUANTUM INTERFERENCES; QUANTUM TRANSPORTS; SEMICONDUCTOR NANOWIRES; SUPERCONDUCTING ELECTRODES; SUPERCONDUCTING GAPS; TUNNEL COUPLINGS; UNIVERSAL CONDUCTANCE FLUCTUATIONS; WEAK COUPLINGS; ZERO BIAS;

REFLECTION;

EID: 60049091306     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801454k     Document Type: Article

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