Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon

Materials Research Bulletin

Volumn 44, Issue 4, 2009, Pages 803-806

  Zheng, Fengang ^a   Shen, Mingrong ^a   Fang, Liang ^a   Wu, Xinglong ^b   Cao, Wenwu ^c,d  

^a SOOCHOW UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

^c HARBIN INSTITUTE OF TECHNOLOGY   (China)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A. Thin films; B. Sol gel chemistry; D. Ferroelectricity

Indexed keywords

BUFFER LAYERS; ELECTRIC FIELDS; EPITAXIAL LAYERS; FERROELECTRICITY; GELATION; GELS; LANTHANUM; LEAD; LEAD ALLOYS; OPTICAL WAVEGUIDES; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; ZIRCONIUM;

A. THIN FILMS; ALTERNATING CURRENTS; B. SOL-GEL CHEMISTRY; D. FERROELECTRICITY; FATIGUE BEHAVIORS; FATIGUE ENDURANCES; FATIGUE PROPERTIES; METAL ELECTRODES; PHOTO-INDUCED CURRENTS; PLATINIZED SILICONS; POLARIZATION FATIGUES; PZT; PZT FILMS; SI SUBSTRATES; SOL-GEL METHODS; SWITCHING FIELDS;

COLLOIDS;

EID: 59849114182     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2008.09.029     Document Type: Article

References (18)

1. Scott J.F. Ferroelectric Memories (2000), Springer, New York
2. Paz de Araujo C.A., Cuchiaro J.D., Mcmillan L.D., Scott M.C., and Scott J.F. Nature (London) 374 (1995) 12
3. Ramesh R., Sands T., and Keramidas V.G. Appl. Phys. Lett. 63 (1993) 731
4. Wu W.B., Wong K.H., Mak C.L., and Choy C.L. J. Phys. D 34 (2001) 1587
5. Liu B.T., Maki K., So Y., Nagarajan V., Ramesh R., Lettieri J., Haeni J.H., Schlom D.G., Tian W., Pan X.Q., Walker F.J., and McKee R.A. Appl. Phys. Lett. 80 (2002) 4801
6. Aggarwal S., Persusse S.R., Nagaraj B., and Ramesh R. Appl. Phys. Lett. 74 (1999) 3023
7. Schorn P.J., Bräuhaus D., Böttger U., and Waser R. J. Appl. Phys. 99 (2006) 114104
8. Wang Y., Yuan F., Wei T., Zhu C., Wang K.F., Xia Y.D., and Liu J.M. J. Appl. Phys. 101 (2007) 016101
9. Sim C.H., Zhou Z.H., Gao X.S., Soon H.P., and Wang J. J. Appl. Phys. 103 (2008) 034102
10. Nakamura T., Nakao Y., Kamisawa A., and Takasu H. Jpn. J. Appl. Phys., Part 1 33 (1994) 5207
11. Stolichnov I., Tagantsev A., Setter N., Cross J.S., and Tsukada M. Appl. Phys. Lett. 73 (1999) 3552
12. Lee E.S., Chung H.W., Lim S.H., and Lee S.Y. Appl. Phys. Lett. 86 (2005) 032903
13. Ezhivalavan S., Samper V.D., and Ying J.Y. Appl. Phys. Lett. 87 (2005) 252907
14. Yang Y.S., Lee S.J., Yi S., Chae B.G., Lee S.H., Joo H.J., and Jang M.S. Appl. Phys. Lett. 76 (2000) 774
15. Pinititle L., Vrejoiu I., Le Rhun G., and Alexe M. J. Appl. Phys. 101 (2007) 064109
16. Cattan E., Velu G., Jaber B., Remiens D., and Thierry B. Appl. Phys. Lett. 70 (1997) 1718
17. Yan F., Wang Y.N., Chan H.L.W., and Choy C.L. Appl. Phys. Lett. 82 (2003) 4325
18. Liang C.S., and Wu J.M. Appl. Phys. Lett. 87 (2005) 022906