Effect of double-sided (Pb0.72 La0.28) Ti0.93O3 buffer layers on the ferroelectric properties of Pb (Zr0.52 Ti0.48) O3 thin films

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Lee, Eun Sun ^a   Chung, Hyun Woo ^a   Lim, Sung Hoon ^a   Lee, Sang Yeol ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; POLARIZATION; PULSED LASER DEPOSITION; SEMICONDUCTOR JUNCTIONS; THIN FILMS; TITANIUM COMPOUNDS; X RAY DIFFRACTION; ZIRCONIUM COMPOUNDS;

CURRENT-VOLTAGE CHARACTERISTICS; FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); PB(ZR0.52TI0.48)O3 (PZT) THIN FILMS; PYROCHLORE PHASES;

LEAD COMPOUNDS;

EID: 17044422059     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1852086     Document Type: Article

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