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Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes

(3) Chia, C K a Dong, J R b Ng, B K c

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); ELECTRIC FIELDS; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM ARSENIDE; PHOTOCURRENTS; PHOTODIODES; POLARIZATION; QUANTUM ELECTRONICS; QUANTUM OPTICS; SNOW;

1550 NM; APPLIED ELECTRIC FIELDS; AVALANCHE GAINS; AVALANCHE MULTIPLICATIONS; ENERGY SEPARATIONS; EXCITED-STATE; GROUND-STATE; INAS; INAS/INP; NORMAL INCIDENCES; OPTICAL RESPONSE; PHOTO RESPONSE; QUANTUM DOTS; RESPONSIVITY; TM POLARIZATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 59849101169 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3079674 Document Type: Article

Times cited : (2)

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