MBE growth of Mn-doped ZnSnAs2 thin films

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 929-932

  Asubar, Joel T ^a   Jinbo, Yoshio ^a   Uchitomi, Naotaka ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting ternary compounds

Indexed keywords

ARSENIC; COPPER COMPOUNDS; CRYSTAL GROWTH; CURIE TEMPERATURE; DIFFRACTION; ELECTRON DIFFRACTION; GROWTH (MATERIALS); LATTICE CONSTANTS; MAGNETIC DEVICES; MAGNETIC MATERIALS; MAGNETIZATION; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUANTUM INTERFERENCE DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SQUIDS; SUBSTRATES; TERNARY ALLOYS; TERNARY SYSTEMS; THIN FILMS; TIN; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC;

A1. CRYSTAL STRUCTURE; A1. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING TERNARY COMPOUNDS;

CRYSTAL STRUCTURE;

EID: 59749095847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.110     Document Type: Article

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