MBE growth of a novel chalcopyrite-type ternary compound MnGeP2

Journal of Physics and Chemistry of Solids

Volumn 66, Issue 11, 2005, Pages 2030-2035

  Sato, K ^a   Ishibashi, T ^a   Minami, K ^a   Yuasa, H ^a   Jogo, J ^a   Nagatsuka, T ^a   Mizusawa, A ^a   Kangawa, Y ^a   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERRIMAGNETIC MATERIALS; GRAIN GROWTH; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; TERNARY SYSTEMS; X RAY DIFFRACTION;

BUFFER LAYER GROWTH; CHALCOPYRITE-TYPE TERNARY COMPOUNDS; INP;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 29144444551     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.09.098     Document Type: Conference Paper

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