MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 11, 2006, Pages 2778-2782

  Asubar, J T ^a   Sato, S ^a   Jinbo, Y ^a   Uchitomi, N ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; EPITAXIAL FILM; EPITAXIAL FILMS;

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; ZINC;

SEMICONDUCTING FILMS;

EID: 33749068638     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200669582     Document Type: Article

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