Lattice strain in AgGaS2 epitaxial layers grown on GaAs (100) by multisource evaporation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4527-4532

  Tsuboi, Nozomu ^a   Kurasawa, Masaki ^a   Kobayashi, Satoshi ^a   Oishi, Koichiro ^b   Kaneko, Futao ^a  

^a NIIGATA UNIVERSITY   (Japan)

^b NAGAOKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

AgGaS2; Chalcopyrite compound; Epitaxial growth; Lattice strain; Nonlinear optical material; Raman scattering; Reflection high energy electron diffraction; Twinning; X ray diffraction

Indexed keywords

CRYSTAL LATTICES; EVAPORATION; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

EPITAXIAL LAYERS; LATTICE STRAIN;

EPITAXIAL GROWTH;

EID: 0032131662     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4527     Document Type: Article

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