|
Volumn 47, Issue 1 PART 2, 2008, Pages 657-660
|
Electrotransport properties of p-ZnSnAs2 thin films grown by molecular beam epitaxy on semi-insulating (001) InP substrates
|
Author keywords
Hall coefficient; MBE; Ternary semiconductor; Transport properties; Van der pauw
|
Indexed keywords
CONCENTRATION (PROCESS);
COPPER COMPOUNDS;
CRYSTAL GROWTH;
HOLE CONCENTRATION;
HOLE MOBILITY;
MOLECULAR BEAM EPITAXY;
MOLECULAR DYNAMICS;
PARTICLE DETECTORS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WIRES;
SUBSTRATES;
SULFIDE MINERALS;
THICK FILMS;
THIN FILMS;
TRANSPORT PROPERTIES;
X RAY DIFFRACTION ANALYSIS;
ZINC SULFIDE;
DIFFRACTOMETRY;
ELECTROTRANSPORT;
GROWTH CONDITIONS;
HALL COEFFICIENT;
HALL COEFFICIENTS;
HIGH-RESOLUTION;
INP SUBSTRATES;
MBE;
MOLECULAR-BEAM EPITAXIES;
ROOM TEMPERATURES;
TEMPERATURE DEPENDENCES;
TERNARY SEMICONDUCTOR;
VAN DER PAUW;
MOLECULAR BEAMS;
|
EID: 54249151930
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.657 Document Type: Article |
Times cited : (22)
|
References (15)
|