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Volumn 47, Issue 1 PART 2, 2008, Pages 657-660

Electrotransport properties of p-ZnSnAs2 thin films grown by molecular beam epitaxy on semi-insulating (001) InP substrates

Author keywords

Hall coefficient; MBE; Ternary semiconductor; Transport properties; Van der pauw

Indexed keywords

CONCENTRATION (PROCESS); COPPER COMPOUNDS; CRYSTAL GROWTH; HOLE CONCENTRATION; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; PARTICLE DETECTORS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; SULFIDE MINERALS; THICK FILMS; THIN FILMS; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

EID: 54249151930     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.657     Document Type: Article
Times cited : (22)

References (15)
  • 8
    • 54249114073 scopus 로고
    • Translation
    • [Translation: Sov. Phys. Solid State 6 (1964) 89].
    • (1964) Phys. Solid State , vol.6 , pp. 89
    • Sov1
  • 13
    • 54249165506 scopus 로고
    • Mem. Ehime Univ
    • S. Isomura and S. Tomioka: Mem. Ehime Univ. 10 (1983) No. 2, 67.
    • (1983) , vol.10 , Issue.2 , pp. 67
    • Isomura, S.1    Tomioka, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.