Metal-insulator transition in n-3C-SiC epitaxial films

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Lebedev, A A ^a   Abramov, P L ^a   Agrinskaya, N V ^a   Kozub, V I ^a   Lebedev, S P ^a   Oganesyan, G A ^a   Tregubova, A S ^a   Shamshur, D V ^a   Skvortsova, M O ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC RESISTANCE; EPITAXIAL FILMS; EPITAXIAL LAYERS; HELIUM; INERT GASES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MOLECULAR BEAM EPITAXY; OPTICAL ENGINEERING; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON CARBIDE; SODIUM; SUBSTRATES;

4H-SIC SUBSTRATES; DOPING LEVELS; GALVANOMAGNETIC PROPERTIES; HELIUM TEMPERATURES; HIGH QUALITIES; LOW-TEMPERATURE CONDUCTIVITIES; METAL-INSULATOR TRANSITIONS; SIC HETEROSTRUCTURES; SIC SUBSTRATES; STRUCTURAL QUALITIES; SUBLIMATION EPITAXIES; TRANSITION REGIONS; X-RAY TOPOGRAPHIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59449089938     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3065989     Document Type: Article

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