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EPJ Applied Physics

Volumn 45, Issue 2, 2009, Pages

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

(4) Moret, M a Ruffenach, S a Briot, O a Gil, B a

a UNIV MONTPELLIER (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ALLOYS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GROWTH (MATERIALS); INDIUM; LIGHT EMISSION; LUMINESCENCE; METALLIC COMPOUNDS; NITRIDES; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOTOLUMINESCENCE;

A THERMALS; ACTIVATION TEMPERATURES; AMBIENT CONDITIONS; INDIUM NITRIDES; INGAN ALLOYS; LOW TEMPERATURES; METAL ORGANIC; METAL-ORGANIC VAPOUR PHASE EPITAXIES; NON-RADIATIVE RECOMBINATION CHANNELS; PHOTOLUMINESCENCE PROPERTIES; TRIMETHYL GALLIUMS; TRIMETHYLINDIUM;

INDIUM ALLOYS;

EID: 59449089054 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap/2009007 Document Type: Article

Times cited : (3)

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