Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Weissenberger, D ^a   Gerthsen, D ^a   Reiser, A ^b   Prinz, G M ^b   Feneberg, M ^b   Thonke, K ^b   Zhou, H ^a   Sartor, J ^a   Fallert, J ^a   Klingshirn, C ^a   Kalt, H ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; ELECTRIC PROPERTIES; ELECTRON IRRADIATION; MICROSCOPES; NANORODS; OXYGEN; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; TRANSISTORS; VACUUM; ZINC OXIDE;

AMBIENT CONDITIONS; ELECTRICAL PROPERTIES; ELECTRONEGATIVE MOLECULES; FIELD EFFECTS; GATE VOLTAGES; HIGH-VACUUM CONDITIONS; MEASUREMENT PROCEDURES; ORDERS OF MAGNITUDES; SCANNING ELECTRON MICROSCOPES; ZNO NANORODS;

FIELD EFFECT TRANSISTORS;

EID: 59349120598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075849     Document Type: Article

References (37)

1. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. -J. Cho, and H. Morko̧, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1992666 98, 041301 (2005).
2. C. Klingshirn, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200743072 244, 3027 (2007).
3. Z. L. Wang, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/16/25/R01 16, R829 (2004).
4. G. -C. Yi, C. Wang, and W. I. Park, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/20/4/003 20, S22 (2005).
5. H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3. 0.CO;2-W 14, 158 (2002).
6. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. NALEFD 1530-6984 10.1021/nl070111x 7, 1003 (2007).
7. J. Suehiro, N. Nakagawa, S. -I. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/17/10/021 17, 2567 (2006).
8. W. Q. Yang, H. B. Huo, L. Dai, R. M. Ma, S. F. Liu, G. Z. Ran, B. Shen, C. L. Lin, and G. G. Qin, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/17/ 19/015 17, 4868 (2006).
9. M. A. Zimmler, D. Stichtenoth, C. Ronning, W. Yi, V. Narayanamurti, T. Voss, and F. Capasso, Nano Lett. NALEFD 1530-6984 10.1021/nl080627w 8, 1695 (2008).
10. O. Harnack, C. Pacholski, H. Weller, A. Yasuda, and J. M. Wessels, Nano Lett. NALEFD 1530-6984 10.1021/nl034240z 3, 1097 (2003).
11. C. S. Lao, J. Liu, P. Gao, L. Zhang, D. Davidovic, R. Tummala, and Z. L. Wang, Nano Lett. NALEFD 1530-6984 10.1021/nl052239p 6, 263 (2006).
12. Y. W. Heo, L. C. Tien, Y. Kwon, D. P. Norton, S. J. Pearton, B. S. Kang, and F. Ren, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1794351 85, 2274 (2004).
13. W. I. Park, J. S. Kim, G. -C. Yi, M. H. Bae, and H. -J. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1821648 85, 5052 (2004).
14. Z. Fan, D. Wang, P. -C. Chang, W. -Y. Tseng, and J. G. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1836870 85, 5923 (2004).
15. J. Goldberger, D. J. Sirbuly, M. Law, and P. Yang, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp0452599 109, 9 (2005).
16. W. -K. Hong, D. -K. Hwang, I. -K. Park, G. Jo, S. Song, S. -J. Park, T. Lee, B. -J. Kim, and E. A. Stach, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2748096 90, 243103 (2007).
17. P. -C. Chang, Z. Fan, C. -J. Chien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2357013 89, 133113 (2006).
18. C. -Y. Wong, L. -M. Lai, S. -L. Leung, V. A. L. Roy, and E. Y.-B. Pun, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2957671 93, 023502 (2008).
19. Q. H. Li, Y. X. Liang, Q. Wan, and T. H. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1840116 85, 6389 (2004).
20. Q. H. Li, T. Gao, Y. G. Wang, and T. H. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1883711 86, 123117 (2005).
21. Z. Fan and J. G. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1883715 86, 123510 (2005).
22. H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton, and J. Lin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1949707 86, 243503 (2005).
23. S. -J. Chang, T. -J. Hsueh, C. -L. Hsu, Y. -R. Lin, I. -C. Chen, and B. -R. Huang, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/19/9/095505 19, 095505 (2008).
24. F. Chaabouni, M. Abaab, and B. Rezig, Sens. Actuators B SABCEB 0925-4005 10.1016/j.snb.2003.12.059 100, 200 (2004).
25. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, New York, 2006), Chap..
26. P. M. Morse and H. Feshbach, Methods of Theoretical Physics (McGraw-Hill, New York, 1953), Chap..
27. Z. Zhang, K. Yao, Y. Liu, C. Jin, X. Liang, Q. Chen, and L. -M. Peng, Adv. Funct. Mater. AFMDC6 1616-301X 10.1002/adfm.200600475 17, 2478 (2007).
28. M. Schirra, A. Reiser, G. M. Prinz, A. Ladenburger, K. Thonke, and R. Sauer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2735411 101, 113509 (2007).
29. J. Maeng, G. Jo, S. -S. Kwon, S. Song, J. Seo, S. -J. Kang, D. -Y. Kim, and T. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2945637 92, 233120 (2008).
30. A. Reiser, A. Ladenburger, G. M. Prinz, M. Schirra, M. Feneberg, A. Langlois, R. Enchelmaier, Y. Li, R. Sauer, and K. Thonke, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2710295 101, 054319 (2007).
31. H. Zhou, J. Fallert, J. Sartor, R. J. B. Dietz, C. Klingshirn, H. Kalt, D. Weissenberger, D. Gerthsen, H. Zeng, and W. Cai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2907197 92, 132112 (2008).
32. D. Weissenberger, M. Dürrschnabel, D. Gerthsen, F. Ṕrez-Willard, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, and R. Sauer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2791006 91, 132110 (2007).
33. J. B. Baxter and C. A. Schmuttenmaer, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp064399a 110, 25229 (2006).
34. J. Fallert, R. Hauschild, F. Stelzl, A. Urban, M. Wissinger, H. Zhou, C. Klingshirn, and H. Kalt, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2718290 101, 073506 (2007).
35. G. Heiland, Z. Phys. ZEPYAA 0044-3328 10.1007/BF01375079 142, 415 (1955).
36. Y. Shapira and A. Friedenberg, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.327330 51, 710 (1980).
37. M. Mieńska, H. Sugier, L. Mazurek, and S. Wysocki, Radiat. Phys. Chem. RPCHDM 0969-806X 10.1016/1359-0197(89)90304-4 33, 47 (1989).