Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 112-116

  Franke, D ^a   Reier, F W ^a   Grote, N ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

InGaAs; MOVPE; Ohmic contacts; Zn diffusion

Indexed keywords

ARSENIC COMPOUNDS; CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (LP-MOVPE);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032477172     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00681-2     Document Type: Article

References (5)

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