High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Tasco, V ^a   Deguffroy, N ^a   Baranov, A N ^a   Tourni E ^a   Satpati, B ^b   Trampert, A ^b   Dunaevskii, M S ^c   Titkov, A ^c  

^a UNIV MONTPELLIER   (France)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

LATERAL SIZES; STRUCTURAL PERFECTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846042585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425041     Document Type: Article

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