-
1
-
-
36749115616
-
A new semiconductor superlattice
-
10.1063/1.89273 0003-6951
-
Sai-Halasz, G.A., Tsu, R., and Esaki, L.: ' A new semiconductor superlattice ', Appl. Phys. Lett., 1977, 30, p. 651-653 10.1063/1.89273 0003-6951
-
(1977)
Appl. Phys. Lett.
, vol.30
, pp. 651-653
-
-
Sai-Halasz, G.A.1
Tsu, R.2
Esaki, L.3
-
2
-
-
36549095407
-
Proposal for strained type II superlattice infrared detectors
-
10.1063/1.339468 0021-8979
-
Smith, D.L., and Mailhot, C.: ' Proposal for strained type II superlattice infrared detectors ', J. Appl. Phys., 1987, 62, p. 2545-2548 10.1063/1.339468 0021-8979
-
(1987)
J. Appl. Phys.
, vol.62
, pp. 2545-2548
-
-
Smith, D.L.1
Mailhot, C.2
-
3
-
-
0031377405
-
xSb superlattice infrared photodiodes
-
10.1063/1.120551 0003-6951
-
xSb superlattice infrared photodiodes ', Appl. Phys. Lett., 1997, 71, p. 3251-3253 10.1063/1.120551 0003-6951
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 3251-3253
-
-
Fuchs, F.1
Weimer, U.2
Pletschen, W.3
Schmitz, J.4
Ahlswede, E.5
Walther, M.6
Wagner, J.7
Koidl, P.8
-
4
-
-
0032686780
-
Uncooled InAs/GaSb type-II infrared detectors grown on GaAs substrates for the 8-12m atmospheric windows
-
0018-9197
-
Mosheni, H., Wojkowski, J., Razeghi, M., Brown, G., and Mitchel, W.: ' Uncooled InAs/GaSb type-II infrared detectors grown on GaAs substrates for the 8-12m atmospheric windows ', IEEE J. Quantum Electron., 1999, 35, p. 1040-1044 0018-9197
-
(1999)
IEEE J. Quantum Electron.
, vol.35
, pp. 1040-1044
-
-
Mosheni, H.1
Wojkowski, J.2
Razeghi, M.3
Brown, G.4
Mitchel, W.5
-
5
-
-
79956033393
-
Type-II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32m
-
10.1063/1.1520699 0003-6951
-
Wei, Y., Gin, A., Razeghi, M., and Brown, G.J.: ' Type-II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32m ', Appl. Phys. Lett., 2002, 81, p. 3675-3677 10.1063/1.1520699 0003-6951
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 3675-3677
-
-
Wei, Y.1
Gin, A.2
Razeghi, M.3
Brown, G.J.4
-
6
-
-
4944251293
-
Band gap tuning of InAs/Gasb type-II superlattices for mid-infrared detection
-
10.1063/1.1776321 0021-8979
-
Haugan, H.J., Szmulowicz, F., Brown, G.J., and Mahalingam, K.: ' Band gap tuning of InAs/Gasb type-II superlattices for mid-infrared detection ', J. Appl. Phys., 2004, 96, p. 2580-2585 10.1063/1.1776321 0021-8979
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 2580-2585
-
-
Haugan, H.J.1
Szmulowicz, F.2
Brown, G.J.3
Mahalingam, K.4
-
7
-
-
16244418117
-
Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
-
10.1049/el:20058045 0013-5194
-
Rodriguez, J.B., Christol, P., Ouvrard, A., Chevrier, F., Grech, P., and Joullié, A.: ' Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range ', Electron. Lett., 2005, 41, p. 362-363 10.1049/el:20058045 0013-5194
-
(2005)
Electron. Lett.
, vol.41
, pp. 362-363
-
-
Rodriguez, J.B.1
Christol, P.2
Ouvrard, A.3
Chevrier, F.4
Grech, P.5
Joullié, A.6
-
8
-
-
34250731265
-
Near bulk-limited RoA of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation
-
0003-6951
-
Hood, A., Delaunay, P.Y., Hoffman, D., Nguyen, B.-M., Wei, Y., Razeghi, M., and Naathan, V.: ' Near bulk-limited RoA of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation ', Appl. Phys. Lett., 2007, 90, p. 233513 0003-6951
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 233513
-
-
Hood, A.1
Delaunay, P.Y.2
Hoffman, D.3
Nguyen, B.-M.4
Wei, Y.5
Razeghi, M.6
Naathan, V.7
-
9
-
-
0031210360
-
Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
-
10.1063/1.119629 0003-6951
-
Baranov, A.N., Bertru, N., Cuminal, Y., Boissier, G., Aliber, C., and Joullié, A.: ' Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures ', Appl. Phys. Lett., 1997, 71, p. 735-737 10.1063/1.119629 0003-6951
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 735-737
-
-
Baranov, A.N.1
Bertru, N.2
Cuminal, Y.3
Boissier, G.4
Aliber, C.5
Joullié, A.6
-
10
-
-
0029483778
-
Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
-
10.1063/1.115354 0003-6951
-
Chow, D.H., Miles, R.H., Hasenberg, T.C., Kost, A.R., Zhang, Y.H., Dunlap, H.L., and West, L.: ' Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices ', Appl. Phys. Lett., 1995, 67, p. 3700-3702 10.1063/1.115354 0003-6951
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3700-3702
-
-
Chow, D.H.1
Miles, R.H.2
Hasenberg, T.C.3
Kost, A.R.4
Zhang, Y.H.5
Dunlap, H.L.6
West, L.7
-
11
-
-
33947315765
-
Interface analysis of InAs/GaSb superlattices grown by MBE
-
0022-0248
-
Satpati, B., RodrigueZ, J.B., Tramper, A., Tournié, E., Joullié, A., and Christol, P.: ' Interface analysis of InAs/GaSb superlattices grown by MBE ', J Cryst. Growth, 2007, 301-302, p. 889-892 0022-0248
-
(2007)
J Cryst. Growth
, vol.301-302
, pp. 889-892
-
-
Satpati, B.1
Rodriguez, J.B.2
Tramper, A.3
Tournié, E.4
Joullié, A.5
Christol, P.6
|