Correlation of Picosecond Laser-Induced Latchup and Energetic Particle-Induced Latchup in CMOS Test Structures

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1948-1956

  Moss, Steven C ^a   LaLumondiere, Stephen D ^a   Scarpulla, John R ^a   MacWilliams, Kenneth P ^a   Crain, William R ^b   Koga, Rocky ^c  

^a Electronics Technology Center   (United States)

^b Space and Environment Technology Center ^*  (United States)

^c AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT TESTING; LASER PULSES; PARTICLE BEAMS; PULSED LASER APPLICATIONS; RADIATION HARDENING; ULTRAFAST PHENOMENA;

ENERGETIC PARTICLE INDUCED LATCHUP; LINEAR ENERGY TRANSFER (LET); PICOSECOND LASER INDUCED LATCHUP;

CMOS INTEGRATED CIRCUITS;

EID: 0029516454     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489239     Document Type: Article

References (21)

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