Time dependence of the growth morphology of GaN single crystals prepared in a Na-Ga melt

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 3157-3160

  Yamane, Hisanori ^a   Aoki, Masato ^a   Yamada, Takahiro ^a   Shimada, Masahiko ^b   Goto, Hiroki ^c   Goto, Takenari ^a   Makino, Hisao ^c   Yao, Takafumi ^a,c   Sarayama, Seiji ^d   Iwata, Hirokazu ^d   DiSalvo, Francis J ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b AKITA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d RICOH COMPANY LTD   (Japan)

^e Department of Obstetrics Gynecology   (United States)

Author keywords

GaN; Growth from solutions; Photoluminescence; Single crystal growth

Indexed keywords

GALLIUM; GALLIUM NITRIDE; HEATING; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SODIUM; SYNTHESIS (CHEMICAL);

GAN; GROWTH FROM SOLUTIONS; MICROPHOTOLUMINESCENCE; SINGLE-CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 22144435071     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3157     Document Type: Article

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