Design implications of single event transients in a commercial 45 nm SOI device technology

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3461-3466

  Kleinosowski, Aj ^a,b   Cannon, Ethan H ^b,c   Pellish, Jonathan A ^a,d   Oldiges, Phil ^e   Wissel, Larry ^c  

^a IBM AUSTIN RESEARCH LABORATORY   (United States)

^b BOEING COMPANY   (United States)

^c IBM   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e IBM RESEARCH   (United States)

Author keywords

Modeling; Radiation event; Single event transient (SET); Single event upset (SEU); Soft error

Indexed keywords

ELECTRIC NETWORK ANALYSIS; STATIC RANDOM ACCESS STORAGE; URANIUM POWDER METALLURGY;

MODELING; RADIATION EVENT; SINGLE EVENT TRANSIENT (SET); SINGLE EVENT UPSET (SEU); SOFT ERROR;

TRANSIENTS;

EID: 58849092335     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2005191     Document Type: Conference Paper

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