Single event-induced error propagation through nominally-off transmission gates

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3558-3562

  Hutson, J M ^a,b   Ramachandran, V ^a,b   Bhuva, B L ^a,b   Zhu, X ^a,c   Schrimpf, R D ^a,b   Amusan, O A ^a,b   Massengill, L M ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

65 nm technology; Radiation effects; Single event effects; Transmission gate

Indexed keywords

65 NM TECHNOLOGY; SINGLE EVENT EFFECTS; SINGLE EVENT TRANSIENT (SET); TRANSMISSION GATE;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ERROR ANALYSIS; RADIATION EFFECTS;

FLIP FLOP CIRCUITS;

EID: 33846292163     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885842     Document Type: Conference Paper

References (9)

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