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Volumn 55, Issue 6, 2008, Pages 3088-3095

Comparison of TID effects in space-like variable dose rates and constant dose rates

Author keywords

Dose rate; ELDRS; LM193; Solar flare; TID

Indexed keywords

DEGRADATION; SOLAR HEATING;

EID: 58849090061     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2006970     Document Type: Conference Paper
Times cited : (13)

References (13)
  • 1
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    • Method 1019.7, MIL-STD-883G, 2006.
    • (2006) Method 1019.7
  • 2
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    • Total dose effects in conventional bipolar transistors and linear integrated circuits
    • Dec
    • A. H. Johnston, G. M. Swift, and B. G. Rax, "Total dose effects in conventional bipolar transistors and linear integrated circuits," IEEE Tmns. Nucl. Sci., vol. 41, pp. 2427-2436, Dec. 1994.
    • (1994) IEEE Tmns. Nucl. Sci , vol.41 , pp. 2427-2436
    • Johnston, A.H.1    Swift, G.M.2    Rax, B.G.3
  • 3
    • 0032313729 scopus 로고    scopus 로고
    • Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)
    • Dec
    • R. L. Pease, M. Gelnhausen, J. Rrieg, J. Titus, T. Turflinger, D. Emily, and L. Cohn, "Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)," IEEE Trans. Nucl. Sci., vol. 45, pp. 2665-2672, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci , vol.45 , pp. 2665-2672
    • Pease, R.L.1    Gelnhausen, M.2    Rrieg, J.3    Titus, J.4    Turflinger, T.5    Emily, D.6    Cohn, L.7
  • 5
    • 8344227517 scopus 로고    scopus 로고
    • Physics and hardness assurance for bipolar technologies
    • Jul, no. IV
    • R. D. Schrimpf, "Physics and hardness assurance for bipolar technologies," in 2001 IEEE NSREC Short Course Notebook, Jul. 2001, no. IV.
    • (2001) 2001 IEEE NSREC Short Course Notebook
    • Schrimpf, R.D.1
  • 6
    • 0038454483 scopus 로고    scopus 로고
    • Total ionizing dose effects in bipolar devices and circuits
    • Jun
    • R. L. Pease, "Total ionizing dose effects in bipolar devices and circuits," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 539-551, Jun. 2003.
    • (2003) IEEE Trans. Nucl. Sci , vol.50 , Issue.3 , pp. 539-551
    • Pease, R.L.1
  • 7
    • 58849086942 scopus 로고    scopus 로고
    • Standard guide for ionizing radiation (total dose) effects testing of semiconductor devices
    • ASTM F1892-04
    • "Standard guide for ionizing radiation (total dose) effects testing of semiconductor devices," in Appendix X2, 2004, ASTM F1892-04.
    • (2004) Appendix X2
  • 8
    • 79960628301 scopus 로고    scopus 로고
    • ELDRS in bipolar linear circuits: A review
    • presented at the
    • R. L. Pease, R. D. Schrimpf, and D. M. Fleetwood, "ELDRS in bipolar linear circuits: A review," presented at the RADECS Conf., 2008.
    • (2008) RADECS Conf
    • Pease, R.L.1    Schrimpf, R.D.2    Fleetwood, D.M.3
  • 11
    • 58849103291 scopus 로고    scopus 로고
    • T. Jordan, NOVICE, A Radiation Transport Shielding Code. Gaithersburg, MD: Experimental and Mathematical Physics Consultants, 2006.
    • T. Jordan, NOVICE, A Radiation Transport Shielding Code. Gaithersburg, MD: Experimental and Mathematical Physics Consultants, 2006.
  • 13
    • 58849101968 scopus 로고    scopus 로고
    • Private Communication
    • A. H. Johnston, Private Communication.
    • Johnston, A.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.