InAsP/InGaAsP quantum-well 1.3μm vertical-cavity surface-emitting lasers

Electronics Letters

Volumn 45, Issue 2, 2009, Pages 105-107

  Lao, Y F ^a,c   Cao, C F ^a   Wu, H Z ^b   Cao, M ^b   Gong, Q ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; SURFACE EMITTING LASERS;

CAVITY MIRRORS; CAVITY SURFACES; DIELECTRIC THIN FILMS; GAIN MEDIUM; MAXIMUM OUTPUT; MULTIMODE LASING; MULTIPLE QUANTUM WELL (MQM); THRESHOLD CURRENTS; TRANSVERSE MODES;

QUANTUM WELL LASERS;

EID: 58449094538     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20093380     Document Type: Article

References (11)

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