InP-based 1.3-1.6-μm VCSELs with selectively etched tunnel-junction apertures on a wavelength flexible platform

IEEE Photonics Technology Letters

Volumn 17, Issue 10, 2005, Pages 2017-2019

  Feezell, D ^a   Buell, D A ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

InP based; Long wavelength; Molecular beam epitaxy; Optical fiber communications; Semiconductor laser processing; Semiconductor lasers; Tunnel junction; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

FIBER BRAGG GRATINGS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);

SEMICONDUCTOR LASERS;

EID: 26844499199     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.854357     Document Type: Article

References (11)

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