Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 1, 2009, Pages 79-82

  Puviarasu, P ^a   Suresh Kumar, V ^a   Kanjilal, D ^b   Asokan, K ^b   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

AFM; GaN; Ion irradiation; Photoluminescence; UV visible optical transmission spectrum; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHLORINE COMPOUNDS; CRYSTAL GROWTH; DIFFRACTION; EPILAYERS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; IONS; IRRADIATION; LIGHT EMISSION; LIGHT TRANSMISSION; LUMINESCENCE; NICKEL; NITRIDES; PHOTOLUMINESCENCE; PLASMA DIAGNOSTICS; SEMICONDUCTING GALLIUM; VAPOR PHASE EPITAXY; X RAY ANALYSIS; X RAY DIFFRACTION;

AFM; AFM IMAGES; ATOMIC FORCES; BAND GAPS; CHLORIDE VAPOUR PHASE EPITAXIES; FLUENCES; GALLIUM OXIDES; GAN; GAN EPILAYERS; GAN LAYERS; ION FLUENCES; ION IRRADIATION; NANOCLUSTER FORMATIONS; NI IONS; PL MEASUREMENTS; UV-VISIBLE OPTICAL TRANSMISSION SPECTRUM; VISIBLE TRANSMITTANCES;

X RAY DIFFRACTION ANALYSIS;

EID: 58349118269     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.10.077     Document Type: Article

References (16)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamda T., Matsushita T., Kiyoku H., and Sugimoto Y. Jpn. Appl. Phys. 34 (1995) 979
2. Northrup J.E., Neugebauer J., and Romano L.T. Phys. Rev. Lett. 77 (1996) 103
3. Goodman S.A., Auret F.D., and Koschnick F.K. Mater. Sci. Eng. B 71 (2000) 100
4. Zaldiver M.H., Femandez P., and Piqueras J. J. Appl. Phys. 85 (1999) 1120
5. Kucheyev S.O., Timmers H., and Zou J. J. Appl. Phys. 95 (2004) 5360
6. Emstev V.V., Goncharuk I.N., and Kalimina E.V. Mater. Sci. Forum 2 (1997) 1143
7. Kuriyama K., Kondo H., and Okada M. Solid State Commun. 119 (2001) 559
8. Auret F.D., Goodman S.A., and Koschnick F.K. Appl. Phys. Lett. 73 (1998) 374
9. Suresh Kumar V., Senthil Kumar M., Puviarasu P., Kumar J., Mohanty T., Kanjilal D., Asokan K., Tripathi A., Fontana M., and Camarani A. Semicond. Sci. Technol. 22 (2007) 511
10. Varadarajan E., Puviarasu P., and Kumar J. J. Crystal Growth 260 (2004) 43
11. Kumar S., Chuhan R.S., Singh R.P., Kabiraj D., Sahoo P.K., Rumbolz C., Srivastava S.K., Bolse W., and Avasthi D.K. Nucl. Instr. and Meth. B 212 (2003) 242
12. Kunert H.W., Maurice T.P., and Brinlc D.J. Nucl. Instr. and Meth. B 181 (2001) 286
13. Varadarajan E., Dhanasekaran R., and Avasthi D.K. Mater. Sci. Eng. B 129 (2006) 121
14. Suresh Kumar V., Senthil Kumar M., Kumar J., Mohanty T., Kanjilal D., Tripathi A., and Kulriya P..K. Radiation effects and defects in solids 162 (2007) 229
15. Sureshkumar V., Puviarasu P., Thangaraju K., Thangavel R., Baranwal V., Singh F., Mohanty T., Asokan K., and Kumar J. Nucl. Instr. and Meth. B 244 (2006) 145
16. Zhang J., Peng X., Wang X., et al. Chem. Phys. Lett. 345 (2001) 372