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Solid State Communications

Volumn 119, Issue 10-11, 2001, Pages 559-562

A point defect complex related to the yellow luminescence in electron irradiated GaN

(3) Kuriyama, K a Kondo, H a Okada, M b

a HOSEI UNIVERSITY (Japan)

b KYOTO UNIVERSITY (Japan)

Author keywords

A. Semiconductors; C. Point defects; D. Radiation effects; E. luminescence

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION EFFECTS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

YELLOW LUMINESCENCE (YL);

GALLIUM NITRIDE;

EID: 0035968418 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(01)00304-0 Document Type: Article

Times cited : (23)

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