Raman and photoluminescence spectroscopy from N2+ -ion implanted and α-irradiated and annealed GaN/sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 181, Issue 1-4, 2001, Pages 286-292

  Kunert, H W ^a   Maurice, T P ^a,b   Brink, D J ^a   Prinsloo, L C ^a   Malherbe, J B ^a   Camassel, J ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b CNRS   (France)

Author keywords

Irradiation; n GaAs; Photoluminescence; Raman spectroscopy

Indexed keywords

ALPHA PARTICLES; ANNEALING; BAND STRUCTURE; HIGH ENERGY PHYSICS; ION IMPLANTATION; MOLECULAR VIBRATIONS; PHOTOLUMINESCENCE; RADIATION DAMAGE; RAMAN SPECTROSCOPY; SAPPHIRE;

STRUCTURAL DAMAGE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035388017     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00376-7     Document Type: Conference Paper

References (11)