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Volumn 53, Issue 2, 2009, Pages 127-133

Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

Author keywords

Extraction; Fluctuations; Halos; Matching; Mismatch; Mobility; Pockets; Variability

Indexed keywords

DEGRADATION; MOSFET DEVICES; THICKNESS MEASUREMENT;

EID: 58349102505     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.017     Document Type: Article
Times cited : (26)

References (13)
  • 1
    • 0033325337 scopus 로고    scopus 로고
    • Liu W et al. Modeling of pocket implanted MOSFETs for anomalous analog behavior. International electron devices meeting 1999, Technical digest; 1999. p. 171-4.
    • Liu W et al. Modeling of pocket implanted MOSFETs for anomalous analog behavior. International electron devices meeting 1999, Technical digest; 1999. p. 171-4.
  • 2
    • 0033280393 scopus 로고    scopus 로고
    • Chatterjee A. Transistor design issues in integrating analog functions with high performance digital CMOS. In: 1999 Symposium on VLSI technology. Digest of technical papers; 1999. p. 147-8.
    • Chatterjee A. Transistor design issues in integrating analog functions with high performance digital CMOS. In: 1999 Symposium on VLSI technology. Digest of technical papers; 1999. p. 147-8.
  • 3
    • 84907853465 scopus 로고    scopus 로고
    • Difrenza R et al. Dependence of channel width and length on MOSFET matching for 0.18 μm CMOS technology. In: ESSDERC 2000. Proceedings of the 30th European solid-state device research conference; 2000. p. 584-7.
    • Difrenza R et al. Dependence of channel width and length on MOSFET matching for 0.18 μm CMOS technology. In: ESSDERC 2000. Proceedings of the 30th European solid-state device research conference; 2000. p. 584-7.
  • 4
    • 33947265310 scopus 로고    scopus 로고
    • Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
    • Roy G., Brown A.R., Adamu-Lema F., Roy S., and Asenov A. Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Trans Electron Dev 53 12 (2006)
    • (2006) IEEE Trans Electron Dev , vol.53 , Issue.12
    • Roy, G.1    Brown, A.R.2    Adamu-Lema, F.3    Roy, S.4    Asenov, A.5
  • 5
    • 0034454728 scopus 로고    scopus 로고
    • Tanaka T. Vth fluctuation induced by statistical variation of pocket dopant profile. International electron devices meeting 2000, Technical digest, IEDM; 2000. p. 271-4.
    • Tanaka T. Vth fluctuation induced by statistical variation of pocket dopant profile. International electron devices meeting 2000, Technical digest, IEDM; 2000. p. 271-4.
  • 6
    • 0023998758 scopus 로고
    • New method for the extraction of MOSFET parameters
    • Ghibaudo G. New method for the extraction of MOSFET parameters. Electron Lett 24 (1988) 544
    • (1988) Electron Lett , vol.24 , pp. 544
    • Ghibaudo, G.1
  • 7
    • 33847721844 scopus 로고    scopus 로고
    • Nakabayashi Y, Ishihara T, Koga J, Takayanagi M, Takagi S. New findings on inversion-layer mobility in highly doped channel Si MOSFETs. In: International electron devices meeting 2005; 2005. 4 p.
    • Nakabayashi Y, Ishihara T, Koga J, Takayanagi M, Takagi S. New findings on inversion-layer mobility in highly doped channel Si MOSFETs. In: International electron devices meeting 2005; 2005. 4 p.
  • 8
    • 0031188590 scopus 로고    scopus 로고
    • CMOS technology for mixed signal ICs
    • Pelgrom M.J. CMOS technology for mixed signal ICs. Solid-State Electron 41 7 (1997) 967-974
    • (1997) Solid-State Electron , vol.41 , Issue.7 , pp. 967-974
    • Pelgrom, M.J.1
  • 9
    • 0022891057 scopus 로고
    • Characterisation and modeling of mismatch in MOS transistors for precision analog design
    • Lakshmikumar K.R. Characterisation and modeling of mismatch in MOS transistors for precision analog design. IEEE J Solid-State Circ 21 6 (1986) 1057-1066
    • (1986) IEEE J Solid-State Circ , vol.21 , Issue.6 , pp. 1057-1066
    • Lakshmikumar, K.R.1
  • 10
    • 21644485738 scopus 로고    scopus 로고
    • Tan PBY, Kordesch AV, Sidek O. CMOS transistor mismatch model with temperature effect for HSPICE and SPECTRE. In: 7th International conference on solid-state and integrated circuits technology proceedings, vol. 2 (pt. 2); 2005. p. 1139-42.
    • Tan PBY, Kordesch AV, Sidek O. CMOS transistor mismatch model with temperature effect for HSPICE and SPECTRE. In: 7th International conference on solid-state and integrated circuits technology proceedings, vol. 2 (pt. 2); 2005. p. 1139-42.
  • 11
    • 0036929393 scopus 로고    scopus 로고
    • Rios R. A three-transistor threshold voltage model for halo processes. International electron devices meeting, Technical digest, 2002. p. 113-6.
    • Rios R. A three-transistor threshold voltage model for halo processes. International electron devices meeting, Technical digest, 2002. p. 113-6.
  • 12
    • 0036772199 scopus 로고    scopus 로고
    • Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation
    • Ueno H. Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation. IEEE Trans Electron Dev 49 10 (2002) 1783-1789
    • (2002) IEEE Trans Electron Dev , vol.49 , Issue.10 , pp. 1783-1789
    • Ueno, H.1
  • 13
    • 3943106832 scopus 로고    scopus 로고
    • Improved split C-V method for effective mobility extraction in sub-0.1-μm Si MOSFETs
    • Romanjek K., Andrieu F., Ernst T., and Ghibaudo G. Improved split C-V method for effective mobility extraction in sub-0.1-μm Si MOSFETs. Electron Dev Lett 25 8 (2004) 583-585
    • (2004) Electron Dev Lett , vol.25 , Issue.8 , pp. 583-585
    • Romanjek, K.1    Andrieu, F.2    Ernst, T.3    Ghibaudo, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.