-
1
-
-
0033325337
-
-
Liu W et al. Modeling of pocket implanted MOSFETs for anomalous analog behavior. International electron devices meeting 1999, Technical digest; 1999. p. 171-4.
-
Liu W et al. Modeling of pocket implanted MOSFETs for anomalous analog behavior. International electron devices meeting 1999, Technical digest; 1999. p. 171-4.
-
-
-
-
2
-
-
0033280393
-
-
Chatterjee A. Transistor design issues in integrating analog functions with high performance digital CMOS. In: 1999 Symposium on VLSI technology. Digest of technical papers; 1999. p. 147-8.
-
Chatterjee A. Transistor design issues in integrating analog functions with high performance digital CMOS. In: 1999 Symposium on VLSI technology. Digest of technical papers; 1999. p. 147-8.
-
-
-
-
3
-
-
84907853465
-
-
Difrenza R et al. Dependence of channel width and length on MOSFET matching for 0.18 μm CMOS technology. In: ESSDERC 2000. Proceedings of the 30th European solid-state device research conference; 2000. p. 584-7.
-
Difrenza R et al. Dependence of channel width and length on MOSFET matching for 0.18 μm CMOS technology. In: ESSDERC 2000. Proceedings of the 30th European solid-state device research conference; 2000. p. 584-7.
-
-
-
-
4
-
-
33947265310
-
Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
-
Roy G., Brown A.R., Adamu-Lema F., Roy S., and Asenov A. Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Trans Electron Dev 53 12 (2006)
-
(2006)
IEEE Trans Electron Dev
, vol.53
, Issue.12
-
-
Roy, G.1
Brown, A.R.2
Adamu-Lema, F.3
Roy, S.4
Asenov, A.5
-
5
-
-
0034454728
-
-
Tanaka T. Vth fluctuation induced by statistical variation of pocket dopant profile. International electron devices meeting 2000, Technical digest, IEDM; 2000. p. 271-4.
-
Tanaka T. Vth fluctuation induced by statistical variation of pocket dopant profile. International electron devices meeting 2000, Technical digest, IEDM; 2000. p. 271-4.
-
-
-
-
6
-
-
0023998758
-
New method for the extraction of MOSFET parameters
-
Ghibaudo G. New method for the extraction of MOSFET parameters. Electron Lett 24 (1988) 544
-
(1988)
Electron Lett
, vol.24
, pp. 544
-
-
Ghibaudo, G.1
-
7
-
-
33847721844
-
-
Nakabayashi Y, Ishihara T, Koga J, Takayanagi M, Takagi S. New findings on inversion-layer mobility in highly doped channel Si MOSFETs. In: International electron devices meeting 2005; 2005. 4 p.
-
Nakabayashi Y, Ishihara T, Koga J, Takayanagi M, Takagi S. New findings on inversion-layer mobility in highly doped channel Si MOSFETs. In: International electron devices meeting 2005; 2005. 4 p.
-
-
-
-
8
-
-
0031188590
-
CMOS technology for mixed signal ICs
-
Pelgrom M.J. CMOS technology for mixed signal ICs. Solid-State Electron 41 7 (1997) 967-974
-
(1997)
Solid-State Electron
, vol.41
, Issue.7
, pp. 967-974
-
-
Pelgrom, M.J.1
-
9
-
-
0022891057
-
Characterisation and modeling of mismatch in MOS transistors for precision analog design
-
Lakshmikumar K.R. Characterisation and modeling of mismatch in MOS transistors for precision analog design. IEEE J Solid-State Circ 21 6 (1986) 1057-1066
-
(1986)
IEEE J Solid-State Circ
, vol.21
, Issue.6
, pp. 1057-1066
-
-
Lakshmikumar, K.R.1
-
10
-
-
21644485738
-
-
Tan PBY, Kordesch AV, Sidek O. CMOS transistor mismatch model with temperature effect for HSPICE and SPECTRE. In: 7th International conference on solid-state and integrated circuits technology proceedings, vol. 2 (pt. 2); 2005. p. 1139-42.
-
Tan PBY, Kordesch AV, Sidek O. CMOS transistor mismatch model with temperature effect for HSPICE and SPECTRE. In: 7th International conference on solid-state and integrated circuits technology proceedings, vol. 2 (pt. 2); 2005. p. 1139-42.
-
-
-
-
11
-
-
0036929393
-
-
Rios R. A three-transistor threshold voltage model for halo processes. International electron devices meeting, Technical digest, 2002. p. 113-6.
-
Rios R. A three-transistor threshold voltage model for halo processes. International electron devices meeting, Technical digest, 2002. p. 113-6.
-
-
-
-
12
-
-
0036772199
-
Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation
-
Ueno H. Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation. IEEE Trans Electron Dev 49 10 (2002) 1783-1789
-
(2002)
IEEE Trans Electron Dev
, vol.49
, Issue.10
, pp. 1783-1789
-
-
Ueno, H.1
-
13
-
-
3943106832
-
Improved split C-V method for effective mobility extraction in sub-0.1-μm Si MOSFETs
-
Romanjek K., Andrieu F., Ernst T., and Ghibaudo G. Improved split C-V method for effective mobility extraction in sub-0.1-μm Si MOSFETs. Electron Dev Lett 25 8 (2004) 583-585
-
(2004)
Electron Dev Lett
, vol.25
, Issue.8
, pp. 583-585
-
-
Romanjek, K.1
Andrieu, F.2
Ernst, T.3
Ghibaudo, G.4
|