Electrical behavior of BaZr 0.1 Ti 0.9 O 3 and BaZr 0.2 Ti 0.8 O 3 thin films

Applied Surface Science

Volumn 255, Issue 8, 2009, Pages 4585-4589

  Chen, Hongwei ^a   Yang, Chuanren ^a   Zhang, Jihua ^a   Wang, Bo ^a   Ji, Hong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Barium zirconium titanate; Ferroelectric properties; Preferred orientation; Thin film; Zr Ti ratio

Indexed keywords

ALUMINUM COMPOUNDS; BARIUM COMPOUNDS; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; EPITAXIAL GROWTH; LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; PLATINUM COMPOUNDS; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS; X RAY DIFFRACTION;

COERCIVE ELECTRIC FIELD; ELECTRICAL BEHAVIORS; FERROELECTRIC PROPERTY; PREFERENTIAL ORIENTATION; PREFERRED ORIENTATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; ZIRCONIUM TITANATE; ZR/TI RATIO;

ZIRCONIUM COMPOUNDS;

EID: 58349099636     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.003     Document Type: Article

References (27)

1. 3 film composite structure for tunable applications. Appl. Phys. Lett. 89 (2006) 032905
2. 3 -based active thin films with silicon-compatible materials and process science protocols to enable affordable on-the-move communications technologies. J. Appl. Phys. 98 (2005) 024507
3. 3 thin films for frequency aligle devices. Appl. Phys. Lett. 89 (2006) 052902
4. Fu C., Pan F., Chen H., Feng S., Cai W., and Yang C. Coplanar phase shifters based on ferroelectric thin films. Int. J. Infrared Milli. Waves 28 3 (2007) 229-235
5. 3 thin film on MgO for room temperature microwave phase shifters. Appl. Phys. Lett. 78 (2001) 652
6. 3 thin films for novel metal-ferroelectric-metal type hydrogen gas sensors. J. Mater. Res. 15 6 (2000) 1291-1302
7. 3 relaxor ferroelectrics. Appl. Phys. Lett. 89 (2006) 122909
8. 3 single crystals. J. Appl. Phys. 88 (2000) 410
9. 3 ceramics. J. Appl. Phys. 92 (2002) 2655
10. 3 ceramics. J. Appl. Phys. 100 (2006) 114109
11. 3 thin films grown by a sol-gel process. Appl. Phys. Lett. 84 (2004) 3136
12. 3 ceramics. Mater. Lett. 60 (2006) 3861-3865
13. 3 thin films prepared by pulsed laser deposition. Scripta Mater. 54 (2006) 197-200
14. Xu J., Menesklou W., and Ivers-tiffée E. Annealing effects on structural and dielectric properties of tunable BZT thin films. J. Electroceram. 13 (2004) 229
15. 3 thin films grown on (0 0 1)MgO. Appl. Phys. Lett. 90 (2007) 142913
16. Lan W.A., Wang T.C., Huang L.H., and Bor T. Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate. Appl. Phys. Lett. 89 (2006) 022910
17. 3 bottom layer. J. Appl. Phys. 100 (2006) 114105
18. 3 thin films prepared by pulsed laser deposition. Appl. Phys. Lett. 89 (2006) 142911
19. 3 thin films for tunable microwave applications. J. Mater. Sci. 43 (2008) 409-412
20. Jie W.J., Zhu J., Qin W.F., Wei X.H., Xiong J., Zhang Y., Bhalla A., and Li Y.R. Enhanced dielectric characteristics of preferential (1 1 1)-oriented BZT thin films by manganese doping. J. Phys. D: Appl. Phys. 40 (2007) 2854-2857
21. 3 thin films obtained from the soft chemical method. Mater. Chem. Phys. 105 (2007) 293-297
22. 3 thin films. J. Appl. Phys. 101 (2007) 034106
23. 3 thin films grown by a sol-gel process. J. Eur. Ceram. Soc. 26 (2006) 1917-1920
24. 3 thin films. Appl. Phys. Lett. 90 (2007) 022903
25. 3 relaxor ferroelectrics. Appl. Phys. Lett. 90 (2007) 182901
26. 3 thin films prepared by sol-gel process. J. Phys. D: Appl. Phys. 37 (2004) 748-752
27. 9 ferroelectric thin films by scanning capacitance microscopy. Appl. Phys. Lett. 82 (2003) 3493