New Single-poly EEPROM with Cell Size down to 8F2 for High Density Embedded Nonvolatile Memory Applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 93-94

  Lee, Kung Hong ^a   King, Ya Chin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONS; MOSFET DEVICES; C (PROGRAMMING LANGUAGE); CELLS; FLASH MEMORY; SEMICONDUCTOR STORAGE; STATIC RANDOM ACCESS STORAGE;

HOT ELECTRONS;

FLASH MEMORY; CYTOLOGY;

CELL-SIZE; CMOS LOGIC PROCESS; ERASE OPERATION; MOSFET TRANSISTORS; NEW PROJECTS; NON-VOLATILE-MEMORY APPLICATIONS; PROGRAM AND ERASE; PROGRAM OPERATION; SINGLE POLY EEPROM; STANDARD CMOS;

EID: 0141538331     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. O. Katsuhiko, et al, in Symp. VLSI Techno., pp. 55-56, 1993
2. T. I. Liou et al, in Symp. VLSI Technology 1989
3. H. Choe et al, VLSI Technology, pp. 94-98 1991
4. M.-H. Chi et al, IEEE Device Conference pp.126-127 1997