Low voltage, low current, high speed program step split gate cell with ballistic direct injection for EEPROM/flash

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 987-990

  Ogura, S ^a   Hori, A ^a   Kato, J ^a   Yamanaka, M ^a   Odanaka, S ^a   Fujimoto, H ^a   Akamatsu, K ^a   Ogura, T ^a   Kojima, M ^a   Kotani, H ^a  

^a Halo LSI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HOT CARRIERS; NONVOLATILE STORAGE; PROM;

ELECTRICALLY ERASABLE PROM (EEPROM); FLASH MEMORIES; SPLIT GATE CELLS;

GATES (TRANSISTOR);

EID: 0032255807     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)