Thermoelectric properties of n-type La-doped Mg2Si based semiconductors

Gongneng Cailiao/Journal of Functional Materials

Volumn 39, Issue 12, 2008, Pages

  Zhang, Qian ^a   Zhu, Tie Jun ^a   Yin, Hao ^a   Zhao, Xin Bing ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Doped; La; Mg2Si; Thermoelectric materials

Indexed keywords

DOPING (ADDITIVES); HOT PRESSING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

ABSOLUTE VALUES; CONDUCTION MECHANISMS; DIMENSIONLESS FIGURE OF MERITS; DOPED; INDUCTION MELTING; LA; MG2SI; PROPERTY MEASUREMENTS; SEMI-CONDUCTORS; SI BASED; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES;

LANTHANUM;

EID: 58249134161     PISSN: 10019731     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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