Thermoelectric properties of P-doped Mg2Si semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 6 A, 2007, Pages 3309-3314

  Tani, Jun Ichi ^a   Kido, Hiroyasu ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Doping; First principles calculation; Hall effect; Mg2Si; Thermoelectric property

Indexed keywords

ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNESIUM COMPOUNDS; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

FIRST-PRINCIPLES CALCULATION; THERMOELECTRIC PROPERTIES;

SEMICONDUCTOR MATERIALS;

EID: 34547838236     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3309     Document Type: Article

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