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Volumn 44, Issue 4 B, 2005, Pages 2509-2511
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Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
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Author keywords
GaN LEDs; Large area light emission LEDs; Laser lift off (LLO); Wafer bonding
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Indexed keywords
ELECTROLUMINESCENCE;
ELECTRON MOBILITY;
EXCIMER LASERS;
GALLIUM NITRIDE;
LIGHT EMISSION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
GAN LEDS;
LARGE-AREA LIGHT-EMISSION LEDS;
LASER LIFT-OFF (LLO);
WAFER BONDING;
LIGHT EMITTING DIODES;
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EID: 21244487432
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.2509 Document Type: Conference Paper |
Times cited : (32)
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References (11)
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