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Volumn 104, Issue 11, 2008, Pages
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4d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
CIVIL AVIATION;
CRYSTAL IMPURITIES;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRIC FIELD EFFECTS;
ELECTRIC FIELDS;
ENERGY GAP;
EPITAXIAL LAYERS;
GALLIUM ALLOYS;
INDUSTRIAL CHEMICALS;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
METALS;
ORGANIC CHEMICALS;
ORGANIC COMPOUNDS;
RHODIUM;
SEMICONDUCTING GALLIUM;
TRANSITION METALS;
VAPORS;
BANDGAP;
CARRIER CAPTURES;
CARRIER EMISSIONS;
COMPREHENSIVE STUDIES;
DEEP LEVELS;
DOPED MATERIALS;
DOPED SAMPLES;
EMISSION BANDS;
FIELD DEPENDENCES;
HIGH TEMPERATURES;
HOLE EMISSIONS;
METAL IMPURITIES;
MINORITY CARRIERS;
ORGANIC CHEMICAL VAPOR DEPOSITIONS;
SMALL HOLES;
TEMPERATURE SCANS;
THERMAL EMISSIONS;
TRAPPING CENTERS;
EMISSION SPECTROSCOPY;
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EID: 58149311076
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3009972 Document Type: Article |
Times cited : (3)
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References (25)
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