Characteristics of deep levels associated with rhodium impurity in n-type GaAs

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3115-3120

  Majid, A ^a   Iqbal, M Zafar ^a   Khan, S Haidar ^a   Ali, Akbar ^a   Zafar, Nasim ^a   Dadgar, A ^b   Bimberg, D ^b  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRON EMISSION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RHODIUM;

BAND GAPS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0141608037     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600530     Document Type: Article

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