Deep-level transient-spectroscopy study of rhodium in indium phosphide

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 11, 1996, Pages 7190-7196

  Dadgar, A ^a   Ammerlahn, D ^a   Naser A ^a   Heitz, R ^a   Kuttler, M ^a   Bimberg, D ^a   Baber, N ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b QUAID I AZAM UNIVERSITY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007598778     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7190     Document Type: Article

References (25)

1. B. Clerjaud, J. Phys. C 18, 3615 (1985).
2. H. Scheffler, N. Baber, A. Dadgar, D. Bimberg, J. Winterfeld and H. Schumann, Phys. Rev. B 51, 4142 (1995).
3. G. Bremond, A. Nouailhat, G. Guillot, Y. Toudic, B. Lambert, M. Gauneau, R. Coquille and B. Deveaud, Semicond. Sci. Technol. 2, 772 (1987).
4. N. Makiuchi, T. C. Macedo, M. J. Caldas and A. Fazzio, Defect Diffusion Forum 62/63, 145 (1989).
5. S. Yamakoshi, in Semi-Insulating III-V Materials, Malmö 1988, edited by G. Grossmann and L. Ledebo (Hilger, Bristol, 1988), p. 213.
6. G. W. Iseler and B. S. Ahern, Appl. Phys. Lett. 48, 1656 (1986).
7. M. J. Harlow, W. J. Duncan, I. F. Lealman and P. C. Spurdens, J. Cryst. Growth 140, 19 (1994).
8. R. P. Leon, M. Kaminska, Kin Man Yu and E. R. Weber, Phys. Rev. B 46, 12t460 (1992).
9. E. W. A. Young and G. M. Fontijn, Appl. Phys. Lett. 56, 146 (1990).
10. T. Wolf, T. Zinke, A. Krost, H. Scheffler, H. Ulrich, D. Bimberg and P. Harde, J. Appl. Phys. 75, 3870 (1994).
11. A. Knecht, M. Kuttler, H. Scheffler, T. Wolf, D. Bimberg and H. Kräutle, Nucl. Instrum. Methods Phys. Res., Sect. B 80/81, 683 (1993).
12. A. Näser, A. Dadgar, M. Kuttler, R. Heitz, J. Y. Hyeon, S. Wernick, D. Bimberg and H. Schumann, Appl. Phys. Lett. 67, 479 (1995).
13. D. Bimberg, A. Dadgar, R. Heitz, A. Knecht, A. Krost, M. Kuttler, H. Scheffler, A. Näser, B. Srocka, T. Wolf, T. Zinke, J. Y. Hyeon, S. Wernik and H. Schumann, J. Cryst. Growth 145, 455 (1994).
14. M. S. Skolnick, R. G. Humphreys, P. R. Tapster, B. Cockayne, and W. R. Mac Ewan, J. Phys. C 16, 7003 (1983).
15. H. Scheffler, B. Srocka, A. Dadgar, M. Kuttler, A. Knecht, R. Heitz, D. Bimberg, J. Y. Hyeon, and H. Schumann, in Physics and Applications of Defects in Advanced Semiconductors, edited by M. O. Manasreh et. al MRS Symposia Proceedings No. 325 (Materials Research Society, Pittsburgh, 1994), p. 329.
16. B. Srocka, H. Scheffler and D. Bimberg, Appl. Phys. Lett. 64, 2679 (1994).
17. H. Lefevre and M. Schulz, Appl. Phys. 12, 45 (1977).
18. P. A. Martin, B. G. Streetman and K. Hess, J. Appl. Phys. 52, 7409 (1981).
19. N. Baber, H. Scheffler, A. Ostmann, T. Wolf and D. Bimberg, Phys. Rev. B 45, 4043 (1992).
20. G. Vincent, A. Chantre and D. Bois, J. Appl. Phys. 50, 5484 (1979).
21. N. Baber, H. G. Grimmeis, M. Klevermann, P. Omling and M. Zafar Iqbal, J. Appl. Phys. 62, 2853 (1987).
22. J. M. Langer, C. Delerue, M. Lanoo and H. Heinrich, Phys. Rev. B 38, 7728 (1988).
23. H. Scheffler, N. Baber, A. Dadgar, T. Wolf, and D. Bimberg (unpublished).
24. A. Dadgar, R. Engelhardt, and D. Bimberg (unpublished).
25. A. Juhl, A. Hoffmann, D. Bimberg and H. J. Schulz, Appl. Phys. Lett. 50, 1292 (1987).