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Volumn 101, Issue 6, 2007, Pages

Electrical characterization of alpha radiation-induced defects in p-GaAs grown by metal-organic chemical-vapor deposition

(3) Naz, Nazir A a Qurashi, Umar S a Iqbal, M Zafar a

a QUAID I AZAM UNIVERSITY (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SURFACE DEFECTS; TEMPERATURE DISTRIBUTION;

DEEP-LEVEL TRANSIENT SPECTROSCOPY; POOLE-FRENKEL MODEL; THERMAL EMISSION RATE; TRANSIENT SPECTROSCOPY MEASUREMENTS;

ELECTRIC PROPERTIES;

EID: 34047159147 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2710298 Document Type: Article

Times cited : (7)

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