Deep levels in rhodium-doped p-type MOCVD GaAs

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 362-366

  Majid, A ^a   Zafar Iqbal, M ^a   Dadgar, A ^b,c   Bimberg, D ^b  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Deep levels; GaAs; MOCVD; Transition metals

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; EVAPORATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; RHODIUM; SEMICONDUCTOR DOPING;

EMISSION RATES; EMISSION SIGNATURES; FORBIDDEN BANDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0347764779     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.074     Document Type: Conference Paper

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