Vertically aligned nanowires from boron-doped diamond

Nano Letters

Volumn 8, Issue 11, 2008, Pages 3573-3576

  Yang, Nianjun ^a   Uetsuka, Hiroshi ^a   Osawa, Eiji ^b   Nebel, Christoph E ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIOSENSORS; BORON; CHEMICAL STABILITY; ELECTRIC WIRE; ELECTROCHEMICAL PROPERTIES; ELECTRONIC PROPERTIES; NANOWIRES; REACTIVE ION ETCHING; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

ACTIVE AREAS; AFM; ATOMIC-FORCE MICROSCOPIES; BIOSENSOR APPLICATIONS; BORON-DOPED DIAMONDS; DIAMOND NANOWIRES; ELECTROCHEMICAL TECHNIQUES; FUNCTIONALIZATION; GEOMETRICAL PROPERTIES; HARD MASKS; IN-BETWEEN; NANO-DIAMOND PARTICLES; REACTIVE IONS; VERTICALLY ALIGNED;

DIAMONDS;

BORON; DIAMOND; NANOWIRE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; ULTRASTRUCTURE;

BORON; DIAMOND; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, SCANNING TUNNELING; NANOWIRES; SURFACE PROPERTIES;

EID: 58149306350     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801136h     Document Type: Article

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