Electrochemical grafting of boron-doped single-crystalline chemical vapor deposition diamond with nitrophenyl molecules

Langmuir

Volumn 23, Issue 6, 2007, Pages 3466-3472

  Uetsuka, Hiroshi ^a   Shin, Dongchan ^a   Tokuda, Norio ^a   Saeki, Kazuhiko ^a   Nebel, Christoph E ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; CYCLIC VOLTAMMETRY; DOPING (ADDITIVES); ELECTROCHEMISTRY; GRAFTING (CHEMICAL); SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARYL DIAZONIUM SALTS; ELECTROCHEMICAL GRAFTING; ELECTROCHEMICAL REDUCTION;

DIAMONDS;

BORON; DIAMOND; HYDROGEN; NITROGEN;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL MODEL; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRODE; ELECTRON; METHODOLOGY; OXIDATION REDUCTION REACTION; PHYSICAL CHEMISTRY; SPECTROMETRY; SURFACE PROPERTY;

BORON; CHEMISTRY, PHYSICAL; CRYSTALLIZATION; DIAMOND; ELECTROCHEMISTRY; ELECTRODES; ELECTRONS; HYDROGEN; MICROSCOPY, ATOMIC FORCE; MODELS, CHEMICAL; NITROGEN; OXIDATION-REDUCTION; SPECTROMETRY, X-RAY EMISSION; SURFACE PROPERTIES;

EID: 33947404013     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la063241e     Document Type: Article

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