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Volumn 20, Issue 47, 2008, Pages

Bychkov-Rashba dominated band structure in an In0.75Ga 0.25As-In0.75Al0.25As device with spin-split carrier densities of <1011 cm-2

(7) Holmes, S N a Simmonds, P J b,c Beere, H E b Sfigakis, F b Farrer, I b Ritchie, D A b Pepper, M a,b

a TOSHIBA CORPORATION (Japan)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BAND STRUCTURE; CARRIER CONCENTRATION; CIVIL AVIATION; ELECTRON GAS; EMBEDDED SYSTEMS; FIELD EFFECT TRANSISTORS; GALLIUM; INDIUM; INDIUM ARSENIDE; MAGNETIC FIELDS; MODULATION; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SPIN DYNAMICS; TRANSPORT PROPERTIES;

A MAGNETIC FIELDS; CARRIER DENSITIES; DEPLETION MODES; DIMENSIONAL SYSTEMS; ENHANCEMENT MODES; LANDAU LEVEL FILLING FACTORS; QUANTUM WELLS; RASHBA SPINS; SUB BANDS; ZEEMAN ENERGIES;

ARSENIC;

EID: 58149291567 PISSN: 09538984 EISSN: 1361648X Source Type: Journal
DOI: 10.1088/0953-8984/20/47/472207 Document Type: Article

Times cited : (15)

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