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Volumn 278, Issue 1-4, 2005, Pages 538-543
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Scattering mechanisms in undoped In0.75Ga0.25As/ In0.75Al0.25As two-dimensional electron gases
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Author keywords
A1. electronic transport; A1. scattering mechanisms; A1. two dimensional electron gas; A3. molecular beam epitaxy; B2. InGaAs; B2. semiconducting III V materials
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Indexed keywords
DOPING (ADDITIVES);
ELECTRONIC STRUCTURE;
ELECTRONS;
GALLIUM;
GASES;
MOLECULAR BEAM EPITAXY;
SCATTERING;
SEMICONDUCTOR MATERIALS;
ELECTRONIC TRANSPORT;
IONIZED IMPURITY;
SCATTERING MECHANISMS;
TWO-DIMENSIONAL ELECTRON GASES;
INDIUM;
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EID: 18444362159
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.104 Document Type: Conference Paper |
Times cited : (33)
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References (14)
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