Spin-orbit coupling in an In0.52Ga0.48As quantum well with two populated subbands

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Simmonds, P J ^a   Holmes, S N ^b   Beere, H E ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE DENSITY; CIVIL AVIATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON GAS; ENERGY GAP; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETISM; MAGNETORESISTANCE; ORBITS; PHOTOACOUSTIC EFFECT; POWER SPECTRUM; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS; TWO DIMENSIONAL;

AMERICAN INSTITUTE OF PHYSICS (AIP); CARRIER (CO); CARRIER DENSITY; DENSITY-DEPENDENT; ELECTRON ENERGY SPECTRUM; INVERSION ASYMMETRY; LOW CARRIER DENSITY; MAGNETOINTERSUBBAND SCATTERING (MIS); NARROW BAND-GAP (NBG); OSCILLATORY MAGNETORESISTANCE; QUANTUM WELLS; RASHBA SPIN-ORBIT (SO) COUPLING; SPIN MANIPULATION; SPIN SPLITTING; SPIN-ORBIT COUPLING (SOC); SPIN-ORBIT COUPLING EFFECTS; SPINTRONIC DEVICES; SUB BAND (SB); SUBBANDS (SB); TWO DIMENSIONAL ELECTRON GAS (2DEG);

SPIN DYNAMICS;

EID: 46449090551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2943275     Document Type: Article

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