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Volumn 20, Issue 3, 2009, Pages
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Parallel and orthogonal E-field alignment of single-walled carbon nanotubes by ac dielectrophoresis
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Author keywords
[No Author keywords available]
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Indexed keywords
ALIGNMENT;
DIELECTRIC DEVICES;
ELECTRIC FIELD EFFECTS;
ELECTRIC FIELDS;
ELECTRIC GENERATORS;
ELECTRODES;
ELECTROLYTIC CAPACITORS;
ELECTROPHORESIS;
IMAGE ENHANCEMENT;
NANOCOMPOSITES;
NANOTUBES;
SCANNING ELECTRON MICROSCOPY;
SINGLE-WALLED CARBON NANOTUBES (SWCN);
SUBSTRATES;
AC DIELECTROPHORESIS;
CONDUCTING SUBSTRATES;
DIELECTROPHORESIS FORCES;
DIELECTROPHORETIC MANIPULATIONS;
ELECTRODE DESIGNS;
FRINGING FIELDS;
HIGH ELECTRIC FIELDS;
NANOTUBE AXIS;
NANOTUBE DENSITIES;
NUMERICAL MODELING;
ORTHOGONAL ALIGNMENTS;
OXIDE THICKNESSES;
PARALLEL ALIGNMENTS;
PLANAR ELECTRODES;
POLARIZABILITY;
RAMAN IMAGES;
RAMAN SPECTROSCOPIC;
SCANNING ELECTRON MICROSCOPY IMAGES;
SEMI-CONDUCTORS;
CARBON NANOTUBES;
METAL OXIDE;
SINGLE WALLED NANOTUBE;
ARTICLE;
ELECTRIC FIELD;
ELECTRODE;
ELECTROPHORESIS;
PRIORITY JOURNAL;
QUANTITATIVE STUDY;
RAMAN SPECTROMETRY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR;
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EID: 58149263199
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/3/035201 Document Type: Article |
Times cited : (29)
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References (45)
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